BiCMOS Technology and Applications - download pdf or read online

By A. R. Alvarez (auth.), A. R. Alvarez (eds.)

ISBN-10: 1475720297

ISBN-13: 9781475720297

ISBN-10: 1475720319

ISBN-13: 9781475720310

The subject of bipolar suitable CMOS (BiCMOS) is an engaging one and of ever-growing functional significance. The "technology pendulum" has swung from the 2 extremes of preeminence of bipolar within the Nineteen Fifties and 60s to the plain never-ending horizons for VLSI NMOS expertise throughout the Nineteen Seventies and 80s. but beginning within the Nineteen Eighties severallimits have been clouding the horizon for natural NMOS know-how. CMOS reemerged as a· practicable excessive density, excessive functionality expertise. equally via the mid Eighties scaled bipolar units had not just validated new excessive pace documents, yet early types of combined bipolar/CMOS expertise have been being produced. accordingly the paradigm of both excessive density . Q[ excessive pace was once metamorphasizing into a chance for either pace and density through a BiCMOS process. Now as we method the Nineteen Nineties there were a couple of functional demonstrations of BiCMOS either for reminiscence and good judgment purposes and that i count on the fashion to amplify over the subsequent decade. This e-book makes a well timed contribution to the sphere of BiCMOS expertise and circuit improvement. The evolution is now certainly speedy in order that it's tough to make this kind of booklet exhaustive of present advancements. most likely both tough is the truth that the hot expertise opens a number of novel circuit possibilities which are as but simply formative of their improvement. Given those hindrances it's a herculean job to aim to collect a e-book on BiCMOS.

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Iyer, K. Kwong, "Complementary MOS-Bipolar Transistor Structure," IEEE Trans. Electron Devices, Vol. ED-16, No. 11, Nov. 18 BICMOS Technology and AppIlcatlons 1969, pp. 945-951. A. H. P. it Technology," 1973 Int. Electron Devices Meeting, pp. 229-231. 5] J. D. D. Meindl, "A Monolithic 200-V CMOS Analog Switch,"J. Solid State Circuits, SC~l1, No. 6, Dec. 1976, pp. 809-817. 6] S. Davis, "Simplified Driver, New Applications Spur Plasma-Panel Usage," Electronic Design News, Sept. 20, 1979, pp. 51-55.

By using a "single-flavored" N-doped poly, the process is simplified, and the penalty of higher resistance associated with P-doping (due to lower mobility) is eliminated. However, the work function of the N-type poly requires that the PMOS channel be counterdoped to achieve the desired threshold (approximately -700m V). This results in a buried-channel device. For such a device, the trans verse electric field penetrates deeper into the silicon, and the minimum potential barrier is subsurface (fig.

2. Most of the tradeoffs occur in the design of the base and collector profiles. The coupling between the MOS and NPN characteristics is more clearly revealed in the front-end design section. Parameter Ie ß RB Re IK fT VA VPT BV eBO CE Ce tQb J. J. J. t J. t t tW b J. J. J. tQc J. J. t t t t J. t t J. 2. First order effects on NPN parameters, for increasing Q,. Wb> and Q,. 33] have proposed a method for NPN device design, graphically depicted in fig. 22. First order NPN device design. The vertical profile design is set to optimize device delay, while optimal horizontal design minimizes the parasitics.

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BiCMOS Technology and Applications by A. R. Alvarez (auth.), A. R. Alvarez (eds.)


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